New germanium transistor is four times faster than current transistor

According to foreign media reports, scientists at MIT have developed a new type of transistor. The new transistor passes current through holes in the material's atomic structure, which is about four times faster than current transistors.

In order to increase speed, scientists placed germanium on different silicon layers and silicon composite products. Later, germanium atoms were combined with silicon layers. Tensioning materials forced the uppermost material structure to be more compact than their original structures. It sounds a bit like we used rattan to change the shape of plants.

The compact structure results in a tighter hole between the germanium materials, and the transistor speed is twice that of most current experimental designs, and the transistor speed on the market is 4 times.